is62wv6416all Integrated Silicon Solution, Inc., is62wv6416all Datasheet

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is62wv6416all

Manufacturer Part Number
is62wv6416all
Description
64k X 16 Low Voltage, Ultra Low Power Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
IS62WV6416ALL
IS62WV6416BLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/14/08
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation:
• TTL compatible interface levels
• Single power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• 2CS Option Available
• Lead-free available
Copyright © 2008 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
30 mW (typical) operating
15 µW (typical) CMOS standby
1.7V--2.2V V
required
2.5V--3.6V V
DD
DD
(62WV6416ALL)
(62WV6416BLL)
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A15
V
GND
DD
CS2
CS1
WE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
speed, 1M bit static RAMs organized as 64K words by 16
bits. It is fabricated using
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62WV6416ALL and IS62WV6416BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
ISSI
MEMORY ARRAY
COLUMN I/O
IS62WV6416ALL/ IS62WV6416BLL are high-
64K x 16
ISSI
's high-performance CMOS
JANUARY 2008
1

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