is43lr16800f-6bl Integrated Silicon Solution, Inc., is43lr16800f-6bl Datasheet - Page 39

• Manufacturer Part Number: is43lr16800f-6bl
• Description: 2m X 16bits X 4banks Mobile Ddr Sdram
• Manufacturer: Integrated Silicon Solution, Inc.

Rev. 00A | Dec. 2010
Power down
down occurs when all banks are idle, it is Precharge Power Down. If Power down occurs when one or more banks are Active, it is referred to
as Active power down. The device cannot stay in this mode for longer than the refresh requirements of the device, without losing data. The
power down state is exited by setting CKE high while issuing a Device Deselect or NOP command. A valid command can be issued after tXP.
Figure35 : Power down (Active or Precharge)
Deep Power down
and all memory data is lost in this mode. All the information in the Mode Register and the Extended Mode Register is lost. Next Figure, DEEP
POWER-DOWN COMMAND shows the DEEP POWER-DOWN command All banks must be in idle state with no activity on the data bus prior to
entering the DPD mode. While in this state, CKE must be held in a constant low state. To exit the DPD mode, CKE is taken high after the
clock is stable and NOP command must be maintained for at least 200 us.
Figure36 : Deep Power down
Power down occurs if CKE is set low coincident with Device Deselect or NOP command and when no accesses are in progress. If power
The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the Mobile DDR are stopped
DQS, DQ, DM
DQS, DQ, DM
Command
Command
Address
Address
/CLK
/CLK
CLK
CKE
CLK
CKE
tIS
tIS
tIS
VALID
VALID
NOP
T0
T0
tIH
tIH
tIH
Power-down mode entry
Deep Power -down mode
tCK
tIS
tIS
NOP
entry
T1
DPD
T1
tCH
Must not exceed refresh device limits
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tCL
T2
T2
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tCKE
Ta0
Ta0
Power-down mode exit
Deep Power-down mode
NOP
Ta1
NOP
exit
Ta1
t XP
VALID
VALID
Tb0
T=200us
NOP
Don ’ t care
Ta2
IS43/46LR16800F
Advanced Information
Don’t care
VALID
VALID
Tb 0
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