tza3013bu-n3 NXP Semiconductors, tza3013bu-n3 Datasheet - Page 14

• Manufacturer Part Number: tza3013bu-n3
• Description: Sdh/sonet Stm16/oc48 Transimpedance Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Physical characteristics of the bare die
2001 Feb 26
handbook, halfpage
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SDH/SONET STM16/OC48
transimpedance amplifier
810
Fig.16 Bonding pad locations of the TZA3013AU.
m
PARAMETER
DREF
INQ
IN
1
2
3
15
4
x
1230 m
0
14
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride
minimum dimension of exposed metallization is 90
except pads 2 and 3 which have exposed metallization of 80
(pad size = 90
2.8 m AlCu
380 m nominal
0.810
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attach is glue
<15 s
0
5
y
TZA3013AU
13
6
12
1.230 mm (0.996 mm
7
11
8
10
9
MGT101
90 m)
GNDD
TESTC
14
2
)
handbook, halfpage
810
Fig.17 Bonding pad locations of the TZA3013BU.
m
DREF
VALUE
INQ
IN
1
2
3
TZA3013A; TZA3013B
90 m (pad size = 100
15
4
x
1230 m
0
14
0
5
80 m
y
TZA3013BU
13
6
Product specification
12
7
11
8
10
9
MGT167
100 m)
GNDD
TESTC