tza3013bu-n3 NXP Semiconductors, tza3013bu-n3 Datasheet - Page 9

• Manufacturer Part Number: tza3013bu-n3
• Description: Sdh/sonet Stm16/oc48 Transimpedance Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Notes
1. Measurement performed with C
2. PSRR is defined as the ratio of change in input current ( I
2001 Feb 26
PSRR
Automatic gain control loop: AGC
t
t
I
Bias voltage: DREF
R
Inputs: IN and INQ
I
V
R
Data outputs: OUT and OUTQ
V
V
V
R
t
t
SYMBOL
att
decay
th(AGC)(p-p)
i(p-p)
r
f
I(bias)
o(cm)
o(se)(p-p)
OO
DREF
i
o
SDH/SONET STM16/OC48
transimpedance amplifier
For example, a 4 mV disturbance on V
current). The value of the external capacitor connected between pads DREF and GND has a significant effect on the
value of PSRR. The specification is valid with an external capacitor of 1 nF.
PSRR
=
power supply rejection ratio measured differentially;
AGC attack time
AGC decay time
AGC threshold current
(peak-to-peak value)
resistance between DREF
and V
input current
(peak-to-peak value)
input bias voltage
small-signal input
resistance
common mode output
voltage
single-ended load output
voltage (peak-to-peak
value)
differential output offset
voltage
output resistance
rise time
fall time
-------------- -
V
I
CC
i
CC
PARAMETER
i
= 0.5 pF comprising 0.4 pF (photodiode) and 0.1 pF (allowed for PCB layout).
CC
note 2
referenced to input
tested at DC level
tested at 1 MHz;
I
AC-coupled; R
AC-coupled; R
I
single-ended; DC tested
20% to 80%
80% to 20%
i
i
< 20 A (p-p)
= 100 A (p-p)
f
f
at 10 MHz will typically add an extra 120 nA to I
i
i
= 100 kHz to 100 MHz
= 3 GHz
CONDITIONS
L
L
9
= 50
= 50 ;
i
) corresponding to change in supply voltage ( V
240
V
45
700
40
1700
100
CC
MIN.
0.5 V
TZA3013A; TZA3013B
38
3.2
10
10
50
270
860
53
110
0
53
200
200
CC
TYP.
0.25 V
i
(photodiode output
340
+1700
1100
200
+100
65
CC
Product specification
MAX.
0.1 V
mA/V
mV
mV
mV
ps
ps
A/V
s
s
A
A
UNIT
CC
):