tza3013bu-n3 NXP Semiconductors, tza3013bu-n3 Datasheet - Page 8

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tza3013bu-n3

Manufacturer Part Number
tza3013bu-n3
Description
Sdh/sonet Stm16/oc48 Transimpedance Amplifier
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices” ).
CHARACTERISTICS
Typical values at T
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
2001 Feb 26
V
V
I
P
T
T
T
V
I
P
T
T
R
f
I
SYMBOL
n
SYMBOL
CC
n(tot)(rms)
stg
j
amb
j
amb
CC
n
tot
CC
tot
tr
3dB(h)
SDH/SONET STM16/OC48
transimpedance amplifier
supply voltage
DC voltage
DC current
total power dissipation
storage temperature
junction temperature
ambient temperature
supply voltage
supply current
total power dissipation
junction temperature
ambient temperature
small-signal transresistance
of the receiver
high frequency 3 dB point
total integrated RMS noise
current over bandwidth
pads IN and INQ
pads OUT and OUTQ
pads OUTSENSE and OUTQSENSE
pad PILOT
pad DREF
pads IN and INQ
pads OUT and OUTQ
pad PILOT
pad DREF
j
= 25 C and V
PARAMETER
CC
= 3.3 V; minimum and maximum values are valid over the entire ambient
PARAMETER
AC-coupled; R
without input signal
V
measured differentially;
AC-coupled
C
referenced to input;
Bessel filter; note 1
f
CC
i
i
R
R
= 0.5 pF
= 1.8 GHz third-order
L
L
= 3.3 V
=
= 50
CONDITIONS
L
8
= 50 ;
3.6
1.8
1.7
3.0
40
40
MIN.
TZA3013A; TZA3013B
3.3
26
85.8
+25
7
3.5
1.9
425
0.5
0.5
0.5
0.5
0.5
0.5
4.0
10
0.2
4.0
65
40
MIN.
TYP.
+3.8
+2.0
V
V
V
V
+4.0
+10
+0.2
+4.0
300
+150
150
+85
3.6
38
134
+125
+85
10
5.0
CC
CC
CC
CC
Product specification
MAX.
MAX.
+ 0.5 V
+ 0.5 V
+ 0.5 V
+ 0.5 V
V
V
mA
mA
mA
mA
mW
V
mA
mW
k
k
GHz
nA
C
C
C
C
C
UNIT
UNIT

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