tza3036u-t-n1 NXP Semiconductors, tza3036u-t-n1 Datasheet - Page 12

• Manufacturer Part Number: tza3036u-t-n1
• Description: Sdh/sonet Stm1/oc3 Transimpedance Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
12. Bare die information
13. Package outline
TZA3036_1
Product data sheet
Table 5.
Not applicable.
Parameter
Glass passivation
Bonding pad
dimension
Metallization
Thickness
Die dimension
Backing
Attach temperature
Attach time
Fig 10. Bonding pad locations
Origin is center of die.
Physical characteristics of the bare die
1
2
3
Value
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride
minimum dimension of exposed metallization is 90 m
(pad size = 100 m
metallization of 80 m
2.8 m AlCu
380 m nominal
820 m
silicon; electrically connected to GND potential through substrate contacts
< 440 C; recommended die attach is glue
< 15 s
Rev. 01 — 24 March 2006
17
4
1300 m ( 20 m
16
5
SDH/SONET STM1/OC3 transimpedance amplifier
15
6
100 m) except pads 2 and 3 which have exposed
80 m (pad size = 90 m
(0,0)
Y
14
2
7
)
X
13
8
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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90 m)
TZA3036
90 m
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