m36p0r8070e0 STMicroelectronics, m36p0r8070e0 Datasheet - Page 16

• Manufacturer Part Number: m36p0r8070e0
• Description: 256 Mbit X16, Multiple Bank, Multilevel, Burst Flash Memory 128 Mbit Burst Psram, 1.8 V Supply, Multichip Package
• Manufacturer: STMicroelectronics

DC and AC parameters
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DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables in this
section are derived from tests performed under the measurement conditions summarized in
Table 4., Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
1. Referenced to V
2. V
Figure 4.
V
V
V
V
V
Load capacitance (C
Output circuit resistors (R
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
DDF
CCP
DDQ
PPF
PPF
CCP
supply voltage (factory environment)
supply voltage (application environment)
supply voltage
supply voltage
supply voltage
= V
DDQ
AC measurement I/O waveform
Operating and AC measurement conditions
.
SS
Parameter
.
L
)
1
V DDQ
, R
0V
2
)
conditions. Designers should check that the
–0.4
Min
Flash memory
1.7
1.7
8.5
–
0 to V
V
16.7
DDQ
30
V
DDQ
/2
DDQ
Max
1.95
1.95
9.5
–
3
+0.4
V DDQ /2
AI06161
Min
1.7
1.7
–
–
–
0 to V
PSRAM
V
16.7
DDQ
30
M36P0R8070E0
DDQ
1
/2
(1)
Max
1.95
1.95
–
–
–
,
(2)
Unit
kΩ
pF
ns
V
V
V
V
V
V
V