k9f1216u0a-ycb0 Samsung Semiconductor, Inc., k9f1216u0a-ycb0 Datasheet - Page 19

• Manufacturer Part Number: k9f1216u0a-ycb0
• Description: 512mb/256mb 1.8v Nand Flash Errata
• Manufacturer: Samsung Semiconductor, Inc.

K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
Pointer Operation of K9F1208X0A(X8)
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’ 00h’
command sets the pointer to ’ A’ area(0~255byte), ’ 01h’ command sets the pointer to ’ B’ area(256~511byte), and ’ 50h’ command sets
the pointer to ’ C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’ 00h’ or ’ 50h’ is sustained until another address pointer command is inputted. ’ 01h’ command, however, is effec-
tive only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’ 01h’ command,
the address pointer returns to ’ A’ area by itself. To program data starting from ’ A’ or ’ C’ area, ’ 00h’ or ’ 50h’ command must be input-
ted before ’ 80h’ command is written. A complete read operation prior to ’ 80h’ command is not necessary. To program data starting
from ’ B’ area, ’ 01h’ command must be inputted right before ’ 80h’ command is written.
Table 2. Destination of the pointer
(1) Command input sequence for programming ’ A’ area
(2) Command input sequence for programming ’ B’ area
(3) Command input sequence for programming ’ C’ area
Command
00h
01h
50h
’ A’ ,’ B’ ,’ C’ area can be programmed.
It depends on how many data are inputted.
00h
01h
50h
’ B’ , ’ C’ area can be programmed.
It depends on how many data are inputted.
Only ’ C’ area can be programmed.
Pointer position
256 ~ 511 byte
512 ~ 527 byte
The address pointer is set to ’ A’ area(0~255), and sustained
The address pointer is set to ’ B’ area(256~511), and will be reset to
’ A’ area after every program operation is executed.
The address pointer is set to ’ C’ area(512~527), and sustained
0 ~ 255 byte
80h
80h
80h
Address / Data input
Address / Data input
Address / Data input
2nd half array(B)
1st half array(A)
spare array(C)
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
Area
10h
10h
10h
18
’ 00h’ command can be omitted.
00h
01h
50h
’ 01h’ command must be rewritten before
every program operation
’ 50h’ command can be omitted.
Figure 5. Block Diagram of Pointer Operation
Pointer select
commnad
(00h, 01h, 50h)
(00h plane)
"A" area
256 Byte
"A"
80h
80h
80h
Address / Data input
Address / Data input
Address / Data input
(01h plane)
FLASH MEMORY
256 Byte
"B" area
Pointer
"B"
10h
10h
10h
(50h plane)
16 Byte
"C" area
"C"
Page Register
Internal