k9f1216u0a-ycb0 Samsung Semiconductor, Inc., k9f1216u0a-ycb0 Datasheet - Page 29

• Manufacturer Part Number: k9f1216u0a-ycb0
• Description: 512mb/256mb 1.8v Nand Flash Errata
• Manufacturer: Samsung Semiconductor, Inc.

K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
Multi-Plane Block Erase Operation
R/B
I/O
CLE
CE
WE
ALE
RE
I/O
R/B
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
0
X
~
7
Block Erase Setup Command
60h
A
Address
9
t
60h
WC
~ A
Max. 4 times repeatable
25
A
9
60h
~ A
16
Page(Row)
A
A
Address
17
9
~ A
~ A
25
24
A
25
60h
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
Erase Confirm Command
DOh
A
9
~ A
25
t
WB
28
60h
A
9
~ A
Busy
t
25
BERS
D0h
Read Multi-Plane
Status Command
t
BERS
71h
FLASH MEMORY
71h
I/O 0