k9f1216u0a-ycb0 Samsung Semiconductor, Inc., k9f1216u0a-ycb0 Datasheet - Page 25

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k9f1216u0a-ycb0

Manufacturer Part Number
k9f1216u0a-ycb0
Description
512mb/256mb 1.8v Nand Flash Errata
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K9F1216U0A-YCB0
Manufacturer:
VIA
Quantity:
220
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
Read1 Operation
CLE
CE
WE
ALE
RE
I/O
R/B
Read2 Operation
CLE
CE
WE
ALE
RE
I/O
R/B
X
X
00h or 01h
50h
(Intercepted by CE)
(Read One Page)
Column
Address
A
0
~ A
M Address
7
A
0
A
9
~ A
~ A
A
A
0
4
7
~A
~A
16
3
7
A
Page(Row)
Address
: Valid Address
: Don
9
A
~ A
17
~ A
16
t
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
care
24
A
17
~ A
A
24
25
t
WB
A
25
24
Busy
t
t
R
WB
t
RR
t
AR
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held
low during tR
Dout N
t
R
Dout N+1
t
t
AR
RC
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held
low during tR
Selected
Row
t
RR
Dout N+2
FLASH MEMORY
t
t
CHZ
OH
Dout
n+M
512
n+m
address M
Start
16

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