MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet

MRF6P21190HR6_06

Manufacturer Part Number

MRF6P21190HR6_06

Description

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6P21190HR6_06.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - Carrier W - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for W- CDMA base station applications with frequencies from 2110

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

1900 mA, P

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Applications

Derate above 25°C

Case Temperature 80°C, 190 W CW

Case Temperature 72°C, 44 W CW

Power Gain — 15.5 dB

Drain Efficiency — 26.5%

IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

out

= 44 Watts Avg., Full Frequency Band, Channel

= 25°C

Characteristic

Rating

Operation

μ″ Nominal.

= 28 Volts, I

Symbol

Document Number: MRF6P21190HR6

DSS

θJC

stg

2110 - 2170 MHz, 44 W AVG., 28 V

MRF6P21190HR6

LATERAL N - CHANNEL

CASE 375D - 05, STYLE 1

RF POWER MOSFET

- 65 to +150

Value (1,2)

2 x W - CDMA

- 0.5, +68

- 0.5, +12

Value

0.25

0.27

700

150

200

NI - 1230

MRF6P21190HR6

Rev. 3, 5/2006

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF6P21190HR6_06

MRF6P21190HR6_06 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- t ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Zero Gate Voltage Drain ...

Page 3

V BIAS + + INPUT BIAS + + C12 R3 C11 C10 C9 Z1 0.850″ x 0.067″ Microstrip Z2 1.140″ x 0.114″ Microstrip Z3 1.830″ ...

Page 4

C12 C10 + R3 C11 - Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during ...

Page 5

IRL 10 8 IM3 6 ACPR 4 2080 2100 Figure Carrier W - CDMA Broadband Performance @ P 20 η IRL ...

Page 6

Vdc 190 W (PEP 1900 mA DD out DQ −20 Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −25 −30 3rd Order −35 5th Order −40 −45 7th Order ...

Page 7

Figure 12. MTTF Factor versus Junction Temperature 100 10 1 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ...

Page 8

Z load Input Matching Network Figure 15. Series Equivalent Source and Load Impedance MRF6P21190HR6 Ω 2200 MHz f = 2200 MHz Z source f = 2000 MHz f = 2000 MHz V = ...

Page 9

RF Device Data Freescale Semiconductor NOTES MRF6P21190HR6 9 ...

Page 10

MRF6P21190HR6 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

aaa ccc (LID) E PIN 5 M (INSULATOR) bbb ...

Page 12

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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