MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet
MRF6P21190HR6_06
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MRF6P21190HR6_06 Summary of contents
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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- t ...
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Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Zero Gate Voltage Drain ...
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V BIAS + + INPUT BIAS + + C12 R3 C11 C10 C9 Z1 0.850″ x 0.067″ Microstrip Z2 1.140″ x 0.114″ Microstrip Z3 1.830″ ...
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C12 C10 + R3 C11 - Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during ...
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IRL 10 8 IM3 6 ACPR 4 2080 2100 Figure Carrier W - CDMA Broadband Performance @ P 20 η IRL ...
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Vdc 190 W (PEP 1900 mA DD out DQ −20 Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −25 −30 3rd Order −35 5th Order −40 −45 7th Order ...
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Figure 12. MTTF Factor versus Junction Temperature 100 10 1 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ...
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Z load Input Matching Network Figure 15. Series Equivalent Source and Load Impedance MRF6P21190HR6 Ω 2200 MHz f = 2200 MHz Z source f = 2000 MHz f = 2000 MHz V = ...
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RF Device Data Freescale Semiconductor NOTES MRF6P21190HR6 9 ...
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MRF6P21190HR6 10 NOTES RF Device Data Freescale Semiconductor ...
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aaa ccc (LID) E PIN 5 M (INSULATOR) bbb ...
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How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...