MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet - Page 2

• Manufacturer Part Number: MRF6P21190HR6_06
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF6P21190HR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push - pull configuration.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
(3)
DS
D
D
D
D
(1)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 250 μAdc)
= 1900 mAdc)
= 2.2 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
(3)
(1,2)
(1)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
V
V
V
ACPR
I
I
I
DS(on)
DQ
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
DSS
g
η
rss
fs
ps
D
= 1900 mA, P
14.5
Min
0.1
—
—
—
—
—
25
—
—
—
1
2
out
= 44 W Avg., f1 = 2112.5 MHz, f2 =
0.21
15.5
26.5
1C (Minimum)
Typ
- 37
- 40
- 15
III (Minimum)
2.8
5.3
1.5
A (Minimum)
—
—
—
2
Class
Freescale Semiconductor
Max
17.5
0.3
- 35
- 38
10
—
—
—
- 9
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S