MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet - Page 11

• Manufacturer Part Number: MRF6P21190HR6_06
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
4X
A
K
E
aaa
M
bbb
ccc
(INSULATOR)
4X
D
T
M
M
1
3
A
G
(LID)
T
M
T
A
N
L
M
4
A
A
B
M
M
PIN 5
M
B
B
2
4
M
M
T
SEATING
PLANE
(FLANGE)
2X
C
PACKAGE DIMENSIONS
B
B
Q
bbb
H
CASE 375D - 05
M
ISSUE E
NI - 1230
bbb
ccc
T
A
(INSULATOR)
M
M
M
(LID)
T
T
R
S
B
A
A
M
M
M
B
B
M
M
F
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
4. RECOMMENDED BOLT CENTER DIMENSION OF
PER ASME Y14.5M−1994.
FROM PACKAGE BODY.
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
bbb
DIM
aaa
ccc
A
B
C
D
G
H
K
M
N
Q
R
E
F
L
S
PIN 1. DRAIN
1.615
0.395
0.150
0.455
0.062
0.004
0.082
0.117
1.219
1.218
0.120
0.355
0.365
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MIN
1.400 BSC
0.540 BSC
0.013 REF
0.010 REF
0.020 REF
INCHES
1.625
0.405
0.200
0.465
0.066
0.007
0.090
0.137
1.241
1.242
0.130
0.365
0.375
MAX
MRF6P21190HR6
41.02
10.03
30.96
30.94
11.56
MILLIMETERS
MIN
3.81
1.57
0.10
2.08
2.97
3.05
9.01
9.27
35.56 BSC
13.72 BSC
0.33 REF
0.25 REF
0.51 REF
41.28
10.29
31.52
31.55
MAX
11.81
5.08
1.68
0.18
2.29
3.48
3.30
9.27
9.53
11