MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet - Page 6

• Manufacturer Part Number: MRF6P21190HR6_06
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF6P21190HR6
30
25
20
15
10
−15
−20
−25
−30
−35
−40
−45
−50
−55
5
0
0.1
V
f1 = 2135 MHz, f2 = 2145 MHz
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 7. Intermodulation Distortion Products
DD
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
DD
5th Order
7th Order
= 28 Vdc, I
3rd Order
1
= 28 Vdc, P
Power Gain and Drain Efficiency
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
versus Output Power
out
versus Tone Spacing
= 1900 mA
TWO−TONE SPACING (MHz)
= 190 W (PEP), I
1
18
16
14
12
10
10
8
6
DQ
3
= 1900 mA
Figure 11. Power Gain versus Output Power
I
f = 2140 MHz
DQ
10
= 1900 mA
TYPICAL CHARACTERISTICS
η
10
P
D
out
, OUTPUT POWER (WATTS) CW
ACPR
IM3
G
ps
100
100
−30
−35
−40
−45
−50
−55
−60
18
15
12
9
6
3
0
12 V
3
58
57
56
55
54
53
52
51
50
49
48
47
100
η
Figure 10. Power Gain and Drain Efficiency
32
16 V
G
D
ps
P1dB = 53.7 dBm (233 W)
20 V
33
Figure 8. Pulse CW Output Power versus
V
24 V
DD
34
P
versus CW Output Power
out
10
= 28 V
P3dB = 54.45 dBm (279 W)
, OUTPUT POWER (WATTS) CW
35
500
P
36
in
, INPUT POWER (dBm)
Input Power
37
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DD
38
= 28 Vdc, I
Freescale Semiconductor
39
V
I
f = 2140 MHz
DQ
DD
40
100
= 1900 mA
DQ
= 28 Vdc
= 1900 mA
RF Device Data
41
Ideal
42
Actual
43
300
60
50
40
30
20
10
0
44