MRF6P21190HR6_06 FREESCALE [Freescale Semiconductor, Inc], MRF6P21190HR6_06 Datasheet - Page 5

• Manufacturer Part Number: MRF6P21190HR6_06
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
16.5
15.5
14.5
17
16
15
14
1
I
DQ
2200 mA
1300 mA
1900 mA
1600 mA
= 2500 mA
Figure 5. Two - Tone Power Gain versus
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
10
Output Power
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
8
6
4
2080
2080
ACPR
IRL
IM3
G
IM3
G
η
IRL
ACPR
η
ps
ps
D
D
2100
2100
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
DD
= 28 Vdc, P
2120
2120
TYPICAL CHARACTERISTICS
= 28 Vdc, P
100
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2140
2140
out
out
= 87 W (Avg.), I
= 44 W (Avg.), I
400
2160
2160
DQ
2180
2180
DQ
= 1900 mA
−30
−35
−40
−45
−50
−55
= 1900 mA
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 10 MHz Tone Spacing
2200
2200
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
1600 mA
1300 mA
1900 mA
2220
2220
out
out
40
30
20
10
−10
−20
−30
−40
−50
50
40
30
20
0
−10
−20
−30
−40
P
2200 mA
out
= 44 Watts Avg.
= 87 Watts Avg.
versus Output Power
, OUTPUT POWER (WATTS) PEP
10
I
−10
−15
−20
−25
−10
−15
−20
−25
−30
−30
DQ
= 2500 mA
MRF6P21190HR6
100
400
5