MRF6VP21KHR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP21KHR6_10 Datasheet - Page 10

• Manufacturer Part Number: MRF6VP21KHR6_10
• Description: RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

10
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
MRF6VP21KHR6
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
4
Sept. 2008
Dec. 2008
Jan. 2008
Apr. 2008
Apr. 2010
Date
• Initial Release of Data Sheet
• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
• Fig. 14, Series Equivalent Source and Load Impedance, corrected Z
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Reporting of pulsed thermal data now shown using the Z
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the
footnote to read “L4” versus “L3”, p. 3.
measured separately, p. 5
MTTF factor accordingly, p. 6
impedance as measured from gate to gate, balanced configuration” and Z
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push--pull test conditions, p. 7
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
p. 10
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
Description
θJC
symbol, p. 1
source
load
copy to read “Test circuit
copy to read “Test circuit
Freescale Semiconductor
RF Device Data