MRF6VP21KHR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP21KHR6_10 Datasheet - Page 5

no-image

MRF6VP21KHR6_10

Manufacturer Part Number
MRF6VP21KHR6_10
Description
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
1000
28
26
24
22
20
18
100
26
25
24
23
22
21
20
19
10
Figure 4. Capacitance versus Drain- -Source Voltage
1
10
10
Figure 6. Pulsed Power Gain and Drain Efficiency
0
V
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
150 mA
Note: Each side of device measured separately.
= 50 Vdc, I
375 mA
Figure 8. Pulsed Power Gain versus
C
rss
750 mA
P
P
10
V
1500 mA
out
out
DS
DQ
C
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
3600 mA
, DRAIN--SOURCE VOLTAGE (VOLTS)
iss
C
V
Pulse Width = 100 μsec, Duty Cycle = 20%
versus Output Power
= 150 mA, f = 225 MHz
oss
DD
= 50 Vdc, f = 225 MHz
Output Power
Measured with ±30 mV(rms)ac @ 1 MHz
V
GS
100
20
100
= 0 Vdc
I
DQ
G
ps
= 6000 mA
η
D
30
TYPICAL CHARACTERISTICS
40
1000
1000
2000
2000
50
80
70
60
50
40
30
20
10
100
65
64
63
62
61
60
59
58
57
56
55
28
24
20
16
12
10
1
30
0
1
Note: Each side of device measured separately.
31
T
Figure 7. Pulsed Output Power versus
200
C
P1dB = 60.37 dBm (1088.93 W)
Figure 9. Pulsed Power Gain versus
= 25°C
Figure 5. DC Safe Operating Area
V
32
P3dB = 61.33 dBm (1358.31 W)
DD
P
V
out
DS
400
P
= 30 V
, OUTPUT POWER (WATTS) PULSED
in
, DRAIN--SOURCE VOLTAGE (VOLTS)
, INPUT POWER (dBm) PULSED
33
600
V
Pulse Width = 100 μsec, Duty Cycle = 20%
Output Power
Input Power
DD
34
35 V
= 50 Vdc, I
35
800
10
T
J
40 V
= 150°C
DQ
36
I
Pulse Width = 100 μsec
Duty Cycle = 20%
1000
DQ
= 150 mA, f = 225 MHz
= 150 mA, f = 225 MHz
45 V
T
37
J
MRF6VP21KHR6
= 200°C
1200
38
50 V
Ideal
T
1400
J
Actual
= 175°C
39
1600
100
40
5

Related parts for MRF6VP21KHR6_10