MRF6VP21KHR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP21KHR6_10 Datasheet - Page 7

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MRF6VP21KHR6_10

Manufacturer Part Number
MRF6VP21KHR6_10
Description
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
Figure 14. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
MHz
225
f
Z
V
o
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= 5 Ω
= 50 Vdc, I
gate to gate, balanced configuration.
drain to drain, balanced configuration.
Z
source
+
--
1.16 + j4.06
Z
DQ
Device
Under
Test
source
= 150 mA, P
f = 225 MHz
Z
load
out
Z
= 1000 W Peak
load
--
+
f = 225 MHz
Z
2.86 + j1.10
source
Z
load
Output
Matching
Network
MRF6VP21KHR6
7

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