MRF6VP21KHR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP21KHR6_10 Datasheet - Page 6

• Manufacturer Part Number: MRF6VP21KHR6_10
• Description: RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF6VP21KHR6
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
65
60
55
50
45
40
0.2
0.1
20
0.00001
0
Figure 12. Maximum Transient Thermal Impedance
Figure 10. Pulsed Output Power versus
D = 0.7
D = 0.5
D = 0.1
0.0001
25
P
in
RECTANGULAR PULSE WIDTH (S)
, INPUT POWER (dBm) PULSED
25_C
0.001
Input Power
30
0.01
35
T
V
I
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
C
85_C
DQ
DD
= --30_C
0.1
= 150 mA
P
D = Duty Factor = t
t
t
T
= 50 Vdc
1
2
J
D
= Pulse Width
= Pulse Period
= P
TYPICAL CHARACTERISTICS
D
40
t
* Z
1
t
JC
2
1
+ T
C
1
/t
2
45
10
26
25
24
23
22
21
20
19
18
10
10
10
10
Figure 11. Pulsed Power Gain and Drain Efficiency
10
9
8
7
6
90
V
I
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
Figure 13. MTTF versus Junction Temperature
DD
This above graph displays calculated MTTF in hours when the device
is operated at V
Duty Cycle = 20%, and η
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
= 150 mA
= 50 Vdc
G
ps
110
P
out
130
T
, OUTPUT POWER (WATTS) PULSED
DD
J
versus Output Power
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
150
D
100
= 67.5%.
out
η
170
T
D
= 1000 W Peak, Pulse Width = 100 μsec,
C
= --30_C
25_C
Freescale Semiconductor
190
85_C
210
RF Device Data
1000
230
2000
250
90
80
70
60
50
40
30
20
10