S29WS-P SPANSION [SPANSION], S29WS-P Datasheet - Page 68

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S29WS-P

Manufacturer Part Number
S29WS-P
Description
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
66
11.8.2
Asynchronous Mode Read
Notes:
1. Valid Address and AVD# Transition occur before CE# is driven Low.
2. VA = Valid Read Address, RD = Read Data.
JEDEC
DQ15-DQ0
Amax-A0
Parameter
AVD#
WE#
RDY
CLK
CE#
OE#
Standard
Hi-Z
t
t
t
AAVDS
AAVDH
t
t
t
t
t
AVDP
PACC
t
t
ACC
t
OEH
OEZ
CAS
CEZ
OE
CE
V
IL or
V
Figure 11.9 Asynchronous Read Mode (AVD# Toggling - Case 1)
IH
Access Time from CE# Low
Asynchronous Access Time
AVD# Low Time
Address Setup Time to Rising Edge of AVD#
Address Hold Time from Rising Edge of AVD#
Output Enable to Output Valid
Output Enable Hold
Time
Output Enable to High Z
CE# Setup Time to AVD#
Intra Page Access Time
Chip Enable to High Z
D a t a
t
WEA
S h e e t
t
OEH
Description
S29WS-P
t
CR
Read
Toggle and Data#
Polling
t
AAVDS
( A d v a n c e
t
VA
AVDP
t
CE
t
AAVDH
t
OE
I n f o r m a t i o n )
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
S29WS-P_00_A7 November 8, 2006
RD
t
Asynchronous
OEZ
t
t
CEZ
CEZ
13.5
7.5
7.6
7.6
83
80
20
6
0
0
4
0
Hi-Z
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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