M29DW128F60NF1E STMICROELECTRONICS [STMicroelectronics], M29DW128F60NF1E Datasheet - Page 40

• Manufacturer Part Number: M29DW128F60NF1E
• Description: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Command interface
Table 14.
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, BKA Bank Address, WBL Write
2. The maximum number of cycles in the command sequence is 36. N+1 is the number of Words to be programmed during
3. Each buffer has the same A5-A22 addresses. A0-A4 are used to select a Word within the N+1 Word page.
4. The 6th cycle has to be issued N time. WBL scans the Word inside the page.
5. BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.
40/94
Write to Buffer and Program
Write to Buffer and Program Abort and
Reset
Write to Buffer and Program Confirm
Double Word Program
Quadruple Word Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Buffer Location. All values in the table are in hexadecimal.
the Write to Buffer and Program operation.
Command
Fast Program Commands, 16-bit mode
N+
5
3
1
3
5
3
2
2
BA
Add
555
555
555
555
555
X
X
(5)
1st
Data
AA
AA
AA
56
A0
29
50
90
Add
2AA
2AA
2AA
PA0
PA0
PA
X
2nd
(1)
Data
PD0
PD0
PD
55
55
55
00
Add
PA1
PA1
555
555
BA
Bus Write operations
3rd
Data
PD1
PD1
F0
25
20
Add
PA2
BA
4th
Data
PD2
N
(2)
PA
Add
PA3
(3)
5th
Data
PD3
PD
M29DW128F
WBL
Add
(4)
6th
Data
PD