CY8C32_12 CYPRESS [Cypress Semiconductor], CY8C32_12 Datasheet - Page 95

• Manufacturer Part Number: CY8C32_12
• Manufacturer: CYPRESS [Cypress Semiconductor]

11.7 Memory
Specifications are valid for –40 °C  T
except where noted.
11.7.1 Flash
Table 11-44. Flash DC Specifications
Table 11-45. Flash AC Specifications
11.7.2 EEPROM
Table 11-46. EEPROM DC Specifications
Document Number: 001-56955 Rev. *N
T
T
T
T
Parameter
Parameter
Parameter
Note
45. See application note
WRITE
ERASE
BULK
PROG
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device programming time
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
AN62391
Description
Description
Description
for a description of a low-overhead method of programming PSoC 3 flash.
A
 85 °C and T
Figure 11-51. Clock to Output Performance
J
V
No overhead
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
 55 °C, 100 K erase/program
 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
[45]
PSoC
1.71
1.71
Min
Min
Min
20
10
–
–
–
–
–
–
®
3: CY8C32 Family
Typ
Typ
Typ
1.5
10
15
–
–
5
–
–
–
–
Data Sheet
Max
Max
Max
5.5
5.5
15
20
13
35
7
2
–
–
Page 95 of 122
seconds
Units
Units
years
Units
ms
ms
ms
ms
ms
V
V