NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet
NAND02GW3B2CN1F
Manufacturer Part Number
NAND02GW3B2CN1F
Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.NAND02GW3B2CN1F.pdf
(62 pages)
Features
Table 1.
1. x16 organization only available for MCP Products.
November 2006
High Density NAND Flash memories
NAND interface
Supply voltage: 1.8V/3.0V
Page size
Block size
Page Read/Program
Copy Back Program mode
Cache Program and Cache Read modes
Fast Block Erase: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
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–
–
–
–
–
–
–
–
–
–
–
Up to 2 Gbit memory array
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 30ns (min)
Page program time: 200µs (typ)
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Product List
NAND02G-B2C
NAND01G-B2B
Reference
Rev 3
Serial Number option
Data protection
Data integrity
ECOPACK
Development tools
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–
–
–
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NAND01GR4B2B
NAND02GR4B2C, NAND02GW4B2C
NAND01GR3B2B, NAND01GW3B2B
NAND02GR3B2C, NAND02GW3B2C
Hardware Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
VFBGA63 9.5 x 12 x 1mm
VFBGA63 9 x 11 x 1mm
®
TSOP48 12 x 20mm
packages
Part Number
NAND01G-B2B
NAND02G-B2C
,
NAND01GW4B2B
FBGA
1 Gbit, 2 Gbit,
(1)
(1)
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