NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 53

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND01G-B2B, NAND02G-B2C
Figure 27. Block Erase AC waveform
1. Address cycle 3 is required for 2Gb devices only.
Figure 28. Reset AC waveform
RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC And AC parameters
SR0
ai08043
ai08038b
53/62