NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 48

no-image

NAND02GW3B2CN1F

Manufacturer Part Number
NAND02GW3B2CN1F
Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DC And AC parameters
Figure 20. Address Latch AC waveforms
1. A fifth address cycle is required for 2Gb devices only.
Figure 21. Data Input Latch AC waveforms
1. Data In Last is 2112 in x8 devices and 1056 in x16 devices.
48/62
CL
I/O
AL
W
E
tELWH
(E Setup time)
I/O
CL
AL
W
E
(AL Setup time)
tALHWH
(ALSetup time)
(Data Setup time)
tWLWH
tALLWH
tDVWH
(AL Hold time)
tWLWH
tWHALL
(Data Setup time)
tWHWL
Adrress
cycle 1
tDVWH
tWLWL
(CL Setup time)
tWLWH
tCLLWH
(Data Hold time)
tDVWH
tWLWL
tWHDX
Data In 0
tWHALL
(Data Hold time)
tWHWL
Adrress
cycle 2
tDVWH
tWLWL
tWHDX
tWLWH
tWLWH
tDVWH
tWHDX
Data In 1
tWHALL
tWHWL
Adrress
cycle 3
tWLWL
tDVWH
tWHDX
tWLWH
tDVWH
tWHDX
Data In
NAND01G-B2B, NAND02G-B2C
Last
tWHALL
tWHWL
tWLWH
Adrress
cycle 4
tWLWL
tWHDX
(E Hold time)
tWHEH
tWLWH
(CL Hold time)
tWHCLH
tDVWH
tWHDX
Adrress
cycle 5
ai13107
ai13106
tWHDX

Related parts for NAND02GW3B2CN1F