NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 52

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NAND02GW3B2CN1F

Manufacturer Part Number
NAND02GW3B2CN1F
Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DC And AC parameters
Figure 26. Page Program AC waveform
1. A fifth address cycle is required for 2Gb devices only.
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RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
tWLWL
(Write Cycle time)
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
Address Input
cycle 4
Add.N
cycle 5
Add.N
tWLWL
N
tWHWH
Data Input
(Program Busy time)
tWHBL
Last
Confirm
NAND01G-B2B, NAND02G-B2C
tBLBH2
Code
tWLWL
10h
Program
Page
Read Status Register
70h
SR0
ai13110b

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