M58BW016BB100T3T STMICROELECTRONICS [STMicroelectronics], M58BW016BB100T3T Datasheet - Page 27

• Manufacturer Part Number: M58BW016BB100T3T
• Description: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 10. Program, Erase Times and Program Erase Endurance Cycles
Note: T
Parameter Block (64Kb) Program
Main Block (512Kb) Program
Parameter Block Erase
Main Block Erase
Program Suspend Latency Time
Erase Suspend Latency Time
Program/Erase Cycles (per Block)
A
= –40 to 125°C, V
Parameters
DD
= 2.7V to 3.6V, V
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
DDQ
100,000
Min
= 2.4V to V
V
DD
PP
0.030
0.23
0.8
1.5
= V
DD
Typ
10
3
M58BW016B/D
V
PP
0.016
0.13
0.64
0.9
= 12V
V
PP
0.060
0.46
1.8
= V
3
DD
Max
10
30
V
PP
0.032
0.26
1.5
1.8
= 12V
cycles
Unit
µs
µs
27/63
s
s
s
s