HM628128 HITACHI [Hitachi Semiconductor], HM628128 Datasheet - Page 12

• Manufacturer Part Number: HM628128
• Description: 1 M SRAM (128-kword x 8-bit)
• Manufacturer: HITACHI [Hitachi Semiconductor]

HM628128D Series
Low V
Parameter
V
Data retention current
Operation recovery time
Notes: 1. This characteristic is guaranteed only for L-version, 20 A max. at Ta = –20 to +40 C.
Low V
12
Chip deselect to data retention time
CC
V
4.5 V
2.2 V
V
CS1
0 V
CC
DR
for data retention
CC
2. This characteristic is guaranteed only for L-SL-version, 3 A max. at Ta = –20 to +40 C.
3. This characteristic is guaranteed only for L-UL-version, 1 A max. at Ta = –20 to +40 C.
4. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer, and Din buffer. If CS2 controls
5. Typical values are at V
6. t
CC
Data Retention Timing Waveform (1) (CS1 Controlled)
data retention mode, Vin levels (address, WE, OE, CS1, I/O) can be in the high impedance state.
If CS1 controls data retention mode, CS2 must be CS2
other input levels (address, WE, OE, I/O) can be in the high impedance state.
Data Retention Characteristics (Ta = –20 to +70 C)
RC
= read cycle time.
t
CDR
CC
= 3.0 V, Ta = +25 C and specified loading, and not guaranteed.
Symbol
V
I
I
I
t
t
CCDR
CCDR
CCDR
CDR
R
DR
*
*
*
1
2
3
Data retention mode
CS1
Min
2.0
—
—
—
0
t
RC
*
6
V
CC
Typ*
—
1.0
1.0
0.5
—
—
– 0.2 V
5
Max
—
50
15
10
—
—
V
CC
– 0.2 V or 0 V
Unit
V
ns
ns
A
A
A
Test conditions*
Vin
(1) 0 V
(2) CS2
V
(1) 0 V
(2) CS2
See retention waveform
CC
CS1
CS1
= 3.0 V, Vin
0V
CS2
t
R
CS2
CS2
V
V
V
V
CC
CC
CC
CC
0.2 V. The
– 0.2 V
– 0.2 V,
– 0.2 V
– 0.2 V
0.2 V or
0.2 V or
4
0 V