M58WR032FB60ZB6 STMICROELECTRONICS [STMicroelectronics], M58WR032FB60ZB6 Datasheet - Page 62

• Manufacturer Part Number: M58WR032FB60ZB6
• Description: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58WR032FT, M58WR032FB
Table 32. CFI Query System Interface Information
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Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C6h
00B4h
000Ah
0017h
0020h
0004h
0000h
0000h
0003h
0000h
0002h
0000h
Data
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for multi-Byte programming = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for multi-Byte programming = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
ms
n
n
µs
n
times typical
n
µs
times typical
128µs
Value
12.6V
11.4V
16µs
1.7V
NA
NA
NA
NA
2V
1s
4s