FDC602P_01 FAIRCHILD [Fairchild Semiconductor], FDC602P_01 Datasheet

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FDC602P_01

Manufacturer Part Number
FDC602P_01
Description
P-Channel 2.5V PowerTrench Specified MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDC602P_01.pdf (5 pages)
FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
.602
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC602P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–5.5 A, –20 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
R
R
Ratings
8mm
DS(ON)
DS(ON)
–5.5
–20
–20
1.6
0.8
78
30
12
= 35 m @ V
= 50 m @ V
6
5
4
April 2001
GS
GS
FDC602P Rev C(W)
3000 units
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

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FDC602P_01 Summary of contents

Page 1

FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

Page 3

Typical Characteristics 20 V =-4.5V GS -3.0V 16 -3.5V -2. 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -4.5V GS ...

Page 4

Typical Characteristics 5 V =-5. -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s ...

Page 5

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ HiSeC™ ...

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