FDC638P_01 FAIRCHILD [Fairchild Semiconductor], FDC638P_01 Datasheet
FDC638P_01
Manufacturer Part Number
FDC638P_01
Description
P-Channel 2.5V PowerTrench Specified MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDC638P_01.pdf
(5 pages)
FDC638P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
Fairchild
.638
SuperSOT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
-6
Semiconductor’s
TM
D
D
– Continuous
– Pulsed
pin 1
FDC638P
S
Device
Parameter
D
D
G
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–4.5 A, –20 V. R
Low gate charge (10 nC typical)
High performance trench technology for extremely
low R
SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)
DS(ON)
2
3
3
1
Tape width
R
DS(ON)
DS(ON)
–55 to +150
Ratings
8mm
–4.5
–20
–20
1.6
0.8
78
30
= 48 m @ V
= 65 m @ V
8
September 2001
6
5
4
GS
GS
FDC638P Rev F1 (W)
= –4.5 V
= –2.5 V
3000 units
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDC638P_01 Summary of contents
Page 1
FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -4.5V GS -2.5V -3.0V 15 -2. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -4. -4.5V GS 1.4 1.2 ...
Page 4
Typical Characteristics -4. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 100ms 1s 1 10s -4.5V GS ...
Page 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ DOME™ ...