FDC638P_01 FAIRCHILD [Fairchild Semiconductor], FDC638P_01 Datasheet - Page 3

• Manufacturer Part Number: FDC638P_01
• Description: P-Channel 2.5V PowerTrench Specified MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Typical Characteristics
20
15
10
5
0
15
12
9
6
3
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
0.5
Figure 1. On-Region Characteristics.
1
Figure 5. Transfer Characteristics.
-50
V
V
GS
-3.0V
DS
V
= -4.5V
I
GS
D
= -5V
-25
= -4.5A
= -4.5V
-V
-V
1
DS
1
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
0
, GATE TO SOURCE VOLTAGE (V)
J
-2.5V
, JUNCTION TEMPERATURE (
25
1.5
2
50
-2.0V
T
75
A
= -55
100
o
o
3
C
2
C)
125
125
o
C
25
o
C
150
2.5
4
Figure 6. Body Diode Forward Voltage Variation
0.15
0.12
0.09
0.06
0.03
0.0001
0.001
0.01
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1.6
1.4
1.2
0.8
0
100
0.1
10
1
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= -2.5V
Gate-to-Source Voltage.
0.2
-V
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
T
5
A
T
, GATE TO SOURCE VOLTAGE (V)
= 125
-3.0V
A
= 25
-I
0.4
D
, DRAIN CURRENT (A)
o
o
C
C
25
-3.5V
o
C
0.6
10
3
T
A
= 125
-55
o
-4.0V
C
o
0.8
C
15
4
FDC638P Rev F (W)
-4.5V
I
D
1
= -2.2A
1.2
20
5