FDC642P_09 FAIRCHILD [Fairchild Semiconductor], FDC642P_09 Datasheet
FDC642P_09
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FDC642P_09 Summary of contents
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FDC642P_F085 P-Channel PowerTrench -20V, -4A, 100mΩ Features Typ r = 52.5mΩ -4.5V, I DS(on) GS Typ r = 75.3mΩ -2.5V, I DS(on) GS Fast switching speed Low gate charge(6.9nC typical) High performance trench technology ...
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MOSFET Maximum Ratings Symbol V Drain to Source Voltage DSS V Gate to Source Voltage GS Drain Current Continuous ( Pulsed E Single Pulse Avalanche Energy AS P Power Dissipation Operating and Storage Temperature ...
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Electrical Characteristics Symbol Parameter Switching Characteristics t Turn-On Time on t Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time d(off) t Fall Time f t Turn-Off Time off Drain-Source Diode Characteristics V Source to Drain Diode ...
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Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 CASE TEMPERATURE A Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.20 0.10 0.05 0.02 ...
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Typical Characteristics 100 10 1 0.1 SINGLE PULSE OPERATION IN THIS MAX RATED AREA MAY BE o LIMITED BY r DS(on 0.01 0.01 0 DRAIN TO SOURCE VOLTAGE (V) ...
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Typical Characteristics 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 - JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 4000 1000 100 f = 1MHz 0.1 ...
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...