MJE13005_06

Manufacturer Part NumberMJE13005_06
Description4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS
ManufacturerONSEMI [ON Semiconductor]
MJE13005_06 datasheet
 
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MJE13005
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
= 100_C
C
@ 3A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
4
Adc
C
I
8
CM
I
2
Adc
B
I
4
BM
I
6
Adc
E
I
12
EM
P
2
W
D
16
W/_C
P
75
W
D
600
W/_C
_C
T
, T
−65 to
J
stg
+150
Symbol
Max
Unit
_C/W
R
62.5
qJA
_C/W
R
1.67
qJC
_C
T
275
L
Device
MJE13005
MJE13005G
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
1
STYLE 1
2
3
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly
Location
Y
= Year
WW
= Work Week
G
= Pb−Free Pack-
age
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13005/D

MJE13005_06 Summary of contents

  • Page 1

    MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    T = 150° 25° −55 ° 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C Figure 1. DC ...

  • Page 4

    I CPK 90% V clamp 10 90 TIME Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance Î Î Î Î Î Î Î Î Î ...

  • Page 5

    Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 0.001 DUTY CYCLE ≤ 10% 68 ≤ ...

  • Page 6

    SAFE OPERATING AREA INFORMATION The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown 0.5 0.2 0.1 0.05 0.02 0. ...

  • Page 7

    SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right ...