2N7052_01 FAIRCHILD [Fairchild Semiconductor], 2N7052_01 Datasheet

no-image

2N7052_01

Manufacturer Part Number
2N7052_01
Description
NPN Darlington Transistor
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
ã 1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CEO
CBO
EBO
J
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JC
JA
C
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
, T
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
B
stg
E
2N7052
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
C
B
E
TA = 25°C unless otherwise noted
2N7053
TA = 25°C unless otherwise noted
TO-226
2N7052
83.3
625
200
5.0
2
.
2N7053
Discrete POWER & Signal
1,000
Max
125
8.0
50
-55 to +150
Value
100
100
1.5
SOT-223
12
NZT7053
C
Technologies
*NZT7053
1,000
125
8.0
B
Units
C
V
V
V
A
C
mW/ C
Units
mW
C/W
C/W
E

Related parts for 2N7052_01

2N7052_01 Summary of contents

Page 1

TO- NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* Symbol V Collector-Emitter Voltage CEO ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Collector-Cutoff Current CES I Emitter-Cutoff Current EBO ON CHARACTERISTICS Current Gain FE ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 2 = 1000 1.6 - 40°C 25 °C 1.2 125 °C 0.8 0 100 I - COLLECTOR CURRENT (mA) C Collector-Cutoff Current vs. Ambient Temperature 100 V = 80V CB ...

Page 4

TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 10000 LOT: QTY: PN2222N NSID: SPEC: D/C1: D9842 SPEC REV REV: (FSCINT) F63TNR Label sample LOT: CBVK741B019 QTY: 2000 FSID: ...

Page 5

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 6

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 7

TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B ...

Page 8

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ 2 ...

Related keywords