HYS64D16000GDL-6-C Infineon, HYS64D16000GDL-6-C Datasheet - Page 16

• Manufacturer Part Number: HYS64D16000GDL-6-C
• Description: 200-Pin Small Outline Dual-In-Line Memory Modules
• Manufacturer: Infineon

Table 9
Parameter
Input Leakage Current
Output Leakage Current
Output High Current,
Normal Strength Driver
Output Low
Current, Normal Strength
Driver
1) 0 °C ≤
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Peak to peak AC noise on
4)
5)
6) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
7) Inputs are not recognized as valid until
8) Values are shown per DDR SDRAM component
Data Sheet
V
to
V
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
TT
ID
V
is the magnitude of the difference between the input level on CK and the input level on CK.
REF
is not applied directly to the device.
T
, and must track variations in the DC level of
A
≤ 70 °C
Electrical Characteristics and DC Operating Conditions (cont’d)
V
Symbol
I
I
I
I
REF
I
OZ
OH
OL
may not exceed ± 2% V
Min.
–2
–5
—
16.2
V
V
REF
TT
is a system supply for signal termination resistors, is expected to be set equal
stabilizes.
V
Typ.
REF
Values
REF (DC)
16
.
. V
HYS64D[32020/16000][H/G]DL–[5/6]–C
Max.
2
5
–16.2
—
REF
Small Outline DDR SDRAM Modules
is also expected to track noise variations in
Unit Note/Test Condition
µA
µA
mA
mA
Any input 0 V ≤
All other pins not under test
= 0 V
DQs are disabled;
0 V ≤
V
V
OUT
OUT
Electrical Characteristics
V
7)8)
= 1.95 V
= 0.35 V
OUT
Rev. 1.0, 2004-03
≤
V
7)
7)
DDQ
V
IN
7)
≤
1)
V
V
DD
DDQ
;
.