HYS64D16000GDL-6-C Infineon, HYS64D16000GDL-6-C Datasheet - Page 17

• Manufacturer Part Number: HYS64D16000GDL-6-C
• Description: 200-Pin Small Outline Dual-In-Line Memory Modules
• Manufacturer: Infineon

4.2
Table 10
Parameter
Operating Current 0
one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating Current 1
one bank; active/read/precharge; Burst Length = 4; see component data sheet.
Precharge Power-Down Standby Current
all banks idle; power-down mode; CKE ≤
Precharge Floating Standby Current
CS ≥
address and other control inputs changing once per clock cycle;
Precharge Quiet Standby Current
CS ≥
address and other control inputs stable at ≥
Active Power-Down Standby Current
one bank active; power-down mode; CKE ≤
Active Standby Current
one bank active; CS ≥
DQ, DM and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle.
Operating Current Read
one bank active; Burst Length = 2; reads; continuous burst;
address and control inputs changing once per clock cycle;
50% of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B;
Operating Current Write
one bank active; Burst Length = 2; writes; continuous burst;
address and control inputs changing once per clock cycle;
50% of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B
Auto-Refresh Current
t
Self-Refresh Current
CKE ≤ 0.2 V; external clock on
Operating Current 7
four bank interleaving with Burst Length = 4; see component data sheet.
Data Sheet
RC
=
V
V
t
RFCMIN
IH,,MIN
IHMIN
, all banks idle; CKE ≥
Current Specification and Conditions
I
, all banks idle; CKE ≥
, burst refresh
DD
Conditions
V
IH,MIN
; CKE ≥
V
V
IH,MIN
IH,MIN
V
IH,MIN
V
;
IL,MAX
;
V
V
V
IN
;
IH,MIN
ILMAX
t
=
RC
V
=
REF
;
or ≤
V
t
RAS,MAX
IN
17
for DQ, DQS and DM;
V
=
IL,MAX
V
I
REF
OUT
;
HYS64D[32020/16000][H/G]DL–[5/6]–C
.
for DQ, DQS and DM.
V
= 0 mA
Small Outline DDR SDRAM Modules
IN
=
V
REF
for DQ, DQS and DM.
Electrical Characteristics
Rev. 1.0, 2004-03
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7