M368L1713CTL-CA2 SAMSUNG [Samsung semiconductor], M368L1713CTL-CA2 Datasheet - Page 2

• Manufacturer Part Number: M368L1713CTL-CA2
• Description: 128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
• Manufacturer: SAMSUNG [Samsung semiconductor]

184pin Unbuffered DDR SDRAM MODULE
M368L1713CTL
Revision History
Revision 0.0 (Oct. 2001)
1. First release
Revision 0.1 (Nov. 2001)
1. Added DDR333 function
2. Updated DDR333 test specification
3. Deleted typical current in IDD spec. table
4. Included address and control input setup/hold time(tIS/tIH) at slow slew rate in DDR200/266 AC specification
5. Deleted Exit self refresh to write command(tXSW) in DDR200/266 AC specification
6. Changed unit of tMRD from tCK to ns at DDR333
7. Rename tXSA(exit self refresh to bank active command) to tXSNR(exit self refresh to non read command) at DDR200/266
8. Rename tXSR(exit self refresh to read command) to tXSRD at DDR200/266
9. Rename tWPREH(DQS in hold time) to tWPRE at DDR200/266
10. Rename tREF(Refresh interval time) to tREFI at DDR200/266
11. Rename tCDLR(Last write data to Read command) to tWTR
Revision 0.2 (Jan. 2002)
1. Added tRAP(Active to Read with auto precharge command)
Revision 0.3 (May. 2002)
1. Change pin location of A13 from pin 103 to pin 167
Rev. 0.3 May. 2002