STP11N65M5 STMicroelectronics, STP11N65M5 Datasheet - Page 3

• Manufacturer Part Number: STP11N65M5
• Description: MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
• Manufacturer: STMicroelectronics

Specifications of STP11N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 0.48 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 85 W

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. I
Table 3.
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4.
R
Symbol
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
P
E
DM
thj-case
V
thj-amb
I
V
T
AR
SD
I
I
TOT
AS
ISO
T
GS
stg
D
D
j
(1)
(2)
≤ 9 A, di/dt ≤ 400 A/µs; V
(1)
Avalanche current, repetetive or not repetetive
(pulse width limited by T
Single pulse avalanche energy (starting t
I
d
Thermal resistance junction-case
max
Thermal resistance junction-pcb
max
Thermal resistance junction-
ambient max
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
= I
Absolute maximum ratings
Thermal data
Avalanche characteristics
AR
; V
dd
C
=50)
= 25 °C)
Parameter
DS
Parameter
Parameter
C
peak < V
Doc ID 022864 Rev 2
= 25 °C
jmax
)
(BR)DSS
C
C
= 25 °C
= 100 °C
, V
D
DD
2
30
j
PAK
=400 V
=25°C,
1.47
DPAK TO-220FP TO-220 IPAK
50
TO-220
D
DPAK
IPAK
2
5.6
36
85
PAK
9
Value
5.0
- 55 to 150
Value
130
Value
± 25
62.5
150
2
15
TO-220FP
Electrical ratings
5.6
36
2500
9
25
1.47
(1)
(1)
(1)
100
Unit
mJ
A
°C/W
°C/W
°C/W
Unit
V/ns
Unit
°C
°C
W
V
A
A
A
V
3/25