STP11N65M5 STMicroelectronics, STP11N65M5 Datasheet - Page 9

• Manufacturer Part Number: STP11N65M5
• Description: MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
• Manufacturer: STMicroelectronics

Specifications of STP11N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 0.48 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 85 W

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 022864 Rev 2
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
Vgs
Vds
Id
10%Vds
90%Vds
90%Vgs
on
on
Vgs(I(t))
circuit
))
Tdelay-off
-off
Trise
Trise
Tcross -over
Tfall
Tfall
-
Concept waveform for Inductive Load Turn-off
Test circuits
AM05540v2
10%Id
90%Id
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