STP11N65M5 STMicroelectronics, STP11N65M5 Datasheet - Page 6

• Manufacturer Part Number: STP11N65M5
• Description: MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
• Manufacturer: STMicroelectronics

Specifications of STP11N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 0.48 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 85 W

Electrical characteristics
2.1
6/25
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
(A)
(A)
(A)
0.1
0.1
0.1
10
10
10
I
I
I
D
D
D
0.1
0.1
0.1
1
1
1
Electrical characteristics (curves)
Safe operating area for DPAK and
IPAK
Safe operating area for TO-220FP
Safe operating area for TO-220 and
D
2
PAK
1
1
1
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
Single
pulse
Single
pulse
Single
pulse
10
10
10
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 022864 Rev 2
10µs
100µs
1ms
10ms
10µs
100µs
1ms
10ms
10µs
100µs
1ms
10ms
AM15398v1
AM15399v1
AM15400v1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance DPAK and IPAK
Thermal impedance for TO-220FP
D
Thermal impedance for TO-220 and
2
PAK