STP11N65M5 STMicroelectronics, STP11N65M5 Datasheet - Page 4

• Manufacturer Part Number: STP11N65M5
• Description: MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
• Manufacturer: STMicroelectronics

Specifications of STP11N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 0.48 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 85 W

Electrical characteristics
2
4/25
Electrical characteristics
(T
Table 5.
Table 6.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
V
when V
C
o(er)
I
I
C
DS(on)
C
o(tr)
GS(th)
Q
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
increases from 0 to 80% V
(2)
DS
increases from 0 to 80% V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source
on-resistance
On /off states
Dynamic
Parameter
Parameter
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
DS
= 0)
GS
DSS
= 0)
Doc ID 022864 Rev 2
DSS
I
V
V
V
V
V
V
V
f = 1 MHz open drain
V
V
(see
D
DS
DS
GS
DS
GS
DS
GS
DS
DD
GS
= 1 mA, V
= 650 V
= 650 V, T
= ± 25 V
= V
= 10 V, I
= 100 V, f = 1 MHz,
= 0
= 0 to 520 V, V
= 10 V
= 520 V, I
Figure
Test conditions
Test conditions
GS
, I
20)
GS
D
D
D
= 250 µA
C
= 4.5 A
= 0
=125 °C
= 4.5 A,
GS
= 0
Min.
Min.
650
3
-
-
-
-
-
Typ.
0.43
Typ.
644
2.5
4.6
8.5
18
55
17
17
4
5
± 100
Max.
0.48
Max.
100
oss
5
1
-
-
-
-
-
oss
when
Unit
Unit
µA
µA
nA
pF
pF
pF
pF
pF
nC
nC
nC
V
V
Ω
Ω