2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 2

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
2)
long.
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Perfomed on a 40x40mm
2
FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
2)
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
T
V
V
V
V
V
|V
I
D
page 2
j
GS
DS
DS
DS
GS
GS
GS
GS
=25 °C
=0.24 A
DS
=V
=60 V, V
=60 V,
= 0 V, I
=0 V, T
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
j
=150 °C
=250 µA
D
=250 µA
D
GS
DS
DS(on)max
=0.5 A
=0.25 A
=-10 V,
=0 V
,
min.
1.5
0.2
60
-
-
-
-
-
-
Values
0.36
typ.
2.1
2.0
1.6
1
-
-
-
-
max.
250
2.5
0.1
2N7002DW
10
5
4
3
-
-
Unit
K/W
V
µA
nA
Ω
S
2011-06-16