2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 4

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.5
0.4
0.3
0.2
0.1
10
10
DS
0
-1
-2
-3
1
0
A
); T
0
)
1
limited by on-state
resistance
A
p
=25 °C; D =0
40
T
V
A
DS
80
10
[°C]
[V]
120
100 µs
10 µs
10 ms
1 ms
DC
1 µs
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.35
0.25
0.15
0.05
=f(t
0.3
0.2
0.1
10
10
10
10
A
0
3
2
1
0
); V
10
p
0
)
0.01
-5
0.2
0.02
0.1
0.5
GS
10
≥10 V
0.05
-4
p
/T
single pulse
10
40
-3
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
10
120
2N7002DW
1
10
2
2011-06-16
10
160
3