2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 5

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
); T
0
0
); |V
10 V
j
=25 °C
GS
DS
|>2|I
7 V
1
1
5 V
4.5 V
D
|R
DS(on)max
2
2
V
V
DS
GS
[V]
[V]
3
3
4
4
2.9 V
3.2 V
3.5 V
4 V
page 5
5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
D
0
=f(I
6
5
4
3
2
1
0
0.00
); T
0
D
2.9 V
j
); T
=25 °C
GS
j
=25 °C
0.10
3.2 V
0.1
0.2
0.20
3.5 V
I
I
D
D
[A]
[A]
0.3
0.30
2N7002DW
0.4
10 V
5 V
0.40
4 V
7 V
4.5 V
2011-06-16
0.5