2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 6

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
10
10
DS
=f(T
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.3 A; V
10
20
98 %
GS
V
T
=10 V
DS
j
[°C]
[V]
60
j
typ
=25°C
20
100
Coss
140
Ciss
Crss
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
3.2
2.8
2.4
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
; I
20
D
150 °C
=250 µA
V
T
SD
j
0.8
[°C]
25 °C
60
[V]
2 %
98 %
typ
25 °C, 98%
100
1.2
150 °C, 98%
2N7002DW
140
2011-06-16
1.6