2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 7

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
13Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
70
65
60
55
50
AV
-1
-2
-3
0
-40
=f(T
10
); R
0
j
); I
J(start)
GS
D
=25 Ω
=250 µA
0
10
1
125 °C
40
T
t
AV
j
[°C]
[µs]
100 °C
80
10
2
25 °C
120
160
10
page 7
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
10
9
8
7
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.5 A pulsed
0.1
12 V
0.2
Q
gate
30 V
[nC]
48 V
0.3
2N7002DW
0.4
2011-06-16
0.5