2N7002DWH6327XT Infineon Technologies, 2N7002DWH6327XT Datasheet - Page 8

• Manufacturer Part Number: 2N7002DWH6327XT
• Description: MOSFET OptiMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of 2N7002DWH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 300 mA
• Resistance Drain-source Rds (on): 3 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 3.1 ns
• Gate Charge Qg: 0.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 5.5 ns
• Part # Aliases: 2N7002DW 2N7002DWH6327XTSA1 H6327

Rev.2.2
Package Outline:
Footprint:
SOT363
Packing:
page 8
2N7002DW
2011-06-16