PSMN4R3-30BL,118 NXP Semiconductors, PSMN4R3-30BL,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN4R3-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 4.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN4R3-30BL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
V
DS
= 15V
40
(A)
I
S
100
80
60
40
20
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aad242
(nC)
T
60
j
Rev. 1 — 22 March 2012
= 175 °C
0.5
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
1
Fig 16. Input, output and reverse transfer capacitances
25 °C
(pF)
10
10
10
C
1.5
4
3
2
10
as a function of drain-source voltage; typical
values
-1
003aad243
V
SD
(V)
2
1
PSMN4R3-30BL
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aad239
C
(V)
C
C
oss
rss
iss
10
2
10 of 15