PSMN4R3-30BL,118 NXP Semiconductors, PSMN4R3-30BL,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R3-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 4.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
Tested to JEDEC standards where applicable.
PSMN4R3-30BL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
fs
120
80
40
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
20
40
…continued
60
80
All information provided in this document is subject to legal disclaimers.
003aad244
I
D
(A)
Conditions
V
R
I
see
I
V
S
S
DS
G(ext)
GS
100
= 15 A; V
= 15 A; dI
Rev. 1 — 22 March 2012
Figure 17
= 15 V; R
= 0 V; V
= 5.6 Ω
GS
S
DS
/dt = -100 A/µs;
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
L
= 0 V; T
= 0.5 Ω; V
= 15 V
Fig 6.
5000
(pF)
4000
3000
2000
1000
C
j
0
= 25 °C;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
GS
= 10 V;
3
PSMN4R3-30BL
Min
-
-
-
-
-
-
-
6
Typ
28
58
44
21
0.81
35
30
9
© NXP B.V. 2012. All rights reserved.
V
003aad240
GS
C
C
-
-
-
Max
-
-
1.2
-
(V)
iss
rss
12
Unit
ns
ns
ns
ns
V
ns
nC
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